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cha6015 - 99f ref. : dscha60153347 - 13 dec 13 1 / 14 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. cha rmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 2 - 8ghz high power amplifier gaas monolithic microwave ic description the cha6015 - 99f is a h pa that provides typically 37.5 d bm output power on the frequency band 2 - 8ghz. the circuit is dedicated to defence applications and also well suited for a wide range of microwave applications and systems. the circuit is manufactured with a phemt process, 0.25 m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is available in chip form . main features main electrical characteristics tamb. = + 25c , vd = 7 v, id (quiescent) = 2 a, cw symbol parameter min typ max unit freq frequency range 2 8 ghz gain linear gain 18 .5 db p 3db output power @ 3 db gain compression 37.5 dbm pae 3db power added efficiency @ 3db gain comp ression 29 %
cha6015 - 99f 2 - 8ghz high power amplifier ref. : dscha60153347 - 13 dec 13 2 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb. = + 25c , vd = +7 v , id (quiescent)=2a, cw symbol parameter min typ max unit fop operating frequency 2 8 ghz g small signal gain 18.5 db rlin input return loss (1) 6 db rlout output return loss 12 db p 1 db ouput power @ 1dbcomp 36.5 dbm p 3db output power @ 3dbcomp 37.5 dbm pae 3db power added efficiency @ 3dbcomp 29 % id 3db supply drain current @ 3dbcomp 2 .8 a vd1, vd2 drain supply voltage 7 v id supply quiescent current ( 2 ) 2 a vg gate supply voltage - 0.45 v ( 1 ) hpa designed to be used in balanced configuration. ( 2 ) parameter can be adjusted by tuning of vg. note: these values are representative of measurements in test fixture with an e quivalent rf w ire b onding of 0.25nh on each rf port .
2 - 8ghz high power amplifier cha6015 - 99f ref. : dscha60153347 - 13 dec 13 3 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 absolute maximum ratings (1) tamb.= + 25c symbol parameter values unit cmp compression level 6 db pin_max maximum peak input power overdrive 27 dbm vd supply voltage ( 2 ) 9 .5 v id supply quiescent current 3 a id_sat supply current in saturation 4 a vg supply voltage 0 v tj maximum junction temperature (3 ) 175 c t a operational temperature range - 40 to +85 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage. ( 2 ) without rf input power. (3 ) a t backside temperature of 85c, rth _ equivalent of the die is 4 c/w. the rth_equivalent is extrapolated, taking into account the full dc power and the channel temperature increase on the worst transistor. typical bias conditions t amb. = + 25c symbol pad n o parameter values unit v d 1 5,15 drain supply voltage stage 1 7 v v d 2 9,11 drain supply voltage stage 2 7 v vg1 3,17 gate supply voltage stage 1 (1) - 0.45 v vg2 6,14 gate supply voltage stage 2 (1) - 0.45 v (1) vg1=vg2 to be adjusted to settle the total quiescent current id to 2a
cha6015 - 99f 2 - 8ghz high power amplifier ref. : dscha60153347 - 13 dec 13 4 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements vd =7v, id (quiescent) =2a, cw linear gain versus frequency output power versus frequency for input power=23dbm at - 40c / 25c / 85c
2 - 8ghz high power amplifier cha6015 - 99f ref. : dscha60153347 - 13 dec 13 5 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements vd =7v, id (quiescent) =2a, cw drain current versus frequency for input power=0dbm and 23dbm at - 40c / 25c / 85c power added efficiency versus frequency for input power=23dbm at - 40c / 25c / 85c
cha6015 - 99f 2 - 8ghz high power amplifier ref. : dscha60153347 - 13 dec 13 6 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements vd =7v, id (quiescent) =2a, cw gain versus input power at 25c output power versus input power at 25c
2 - 8ghz high power amplifier cha6015 - 99f ref. : dscha60153347 - 13 dec 13 7 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements vd =7v, id (quiescent) =2a, cw drain current versus input power at 25c power added efficiency versus input power at 25c
cha6015 - 99f 2 - 8ghz high power amplifier ref. : dscha60153347 - 13 dec 13 8 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements vd =7v, id (quiescent) =2a, cw gain versus frequency at 25c for input power=0/10/15/17/19/21/23dbm output power versus frequency at 25c for input power=0/10/15/17/19/21/23dbm
2 - 8ghz high power amplifier cha6015 - 99f ref. : dscha60153347 - 13 dec 13 9 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical board measurements vd =7v, id (quiescent) =2a, cw drain current versus frequency at 25c for input power=0/10/15/17/19/21/23dbm power added efficiency versus frequency at 25c for input power=0/10/15/17/19/21/23dbm
cha6015 - 99f 2 - 8ghz high power amplifier ref. : dscha60153347 - 13 dec 13 10 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 mechanical data all dimensions are in micrometers chip size = 6530 x 4680 chip thickness = 70m 10m rf pads (1, 10) = 200 x 122m dc p ads (3, 6, 14, 17) = 100 x 100m dc pads (5, 15) = 270 x 100m dc pads (9, 11) = 355 x 100m chip width and length are given with a tolerance of 35m pin number pin name description 1 in input rf 2 , 18 vgr1 nc 3 , 17 vg1 vg1 4, 8, 12, 16 gnd ground 5, 15 vd1 vd1 6, 14 vg2 vg2 7, 13 vgr2 nc 9, 11 vd2 vd2 10 out output rf
2 - 8ghz high power amplifier cha6015 - 99f ref. : dscha60153347 - 13 dec 13 11 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended assembly plan recommended circuit bonding table port connection external capacitor in inductance (lbonding) = 0. 25 nh 2 gold wires with diameter of 25m (typical length of 200m) out inductance (lbonding) = 0. 25 nh 2 gold wires with diameter of 25m (typical length of 200m) vg inductance ? c1 ~ 120pf , c2 ~10nf vd (1) inductance ? c1 ~ 120pf, c2 ~ 10nf (1) 2 gold wires with diameter of 25m per pin are necessary to connect vd2 (pins 9 and 11)
cha6015 - 99f 2 - 8ghz high power amplifier ref. : dscha60153347 - 13 dec 13 12 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 dc schematic high power amplifier: 7 v, 2 a
2 - 8ghz high power amplifier cha6015 - 99f ref. : dscha60153347 - 13 dec 13 13 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 notes
cha6015 - 99f 2 - 8ghz high power amplifier ref. : dscha60153347 - 13 dec 13 14 / 14 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums products. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data a re available in the application note an0019 also available at http://www.ums - gaas.com . ordering information chip form : cha6015 - 99f /00 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in thi s publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

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